A resistance variable memory apparatus (100) of the present invention is a resistance variable memory apparatus (100) using a resistance variable element (22) transitioning between plural resistance states in response to electric pulses of the same polarity, in which a series resistance setting unit (10) is configured to set a resistance value of the series current path and a parallel resistance setting unit (30) is configured to set a resistance value of a parallel current path such that the resistance values become resistance values at which a node potential is not larger than a second voltage level in a state where an electric pulse application device (50) is outputting a first electric pulse after the resistance variable element (22) has switched to the high-resistance state, and the node potential is not larger than a first voltage level in the state where the electric pulse application device (50) is outputting a second electric pulse after the resistance variable element (22) has switched to the low-resistance state.