One embodiment relates to a ferroelectric memory device. The ferroelectric memory device includes a segment of contiguous ferroelectric memory cells arranged in rows and columns. A row of ferroelectric memory cells includes a common wordline that allows access to the memory cells of the row and also includes at least two platelines associated with the row. At least one of the at least two platelines is associated with adjacent columns of ferroelectric memory cells within the row. The row of ferroelectric memory cells includes another word line which is not associated with the at least two platelines. Other methods and systems are also disclosed.