Invention Grant
- Patent Title: Converting SRAM cells to ROM cells
- Patent Title (中): 将SRAM单元转换为ROM单元
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Application No.: US12379616Application Date: 2009-02-25
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Publication No.: US07920411B2Publication Date: 2011-04-05
- Inventor: Ingming Chang , Karl Lin Wang
- Applicant: Ingming Chang , Karl Lin Wang
- Applicant Address: GB Cambridge
- Assignee: ARM Limited
- Current Assignee: ARM Limited
- Current Assignee Address: GB Cambridge
- Agency: Nixon & Vanderhye P.C.
- Main IPC: G11C11/40
- IPC: G11C11/40

Abstract:
A method of converting a static random access memory cell to a read only memory cell and the cell thus converted is disclosed. The cell to be converted comprises a data retention portion powered by a higher and lower voltage supply line and four transistors arranged as two cross coupled inverters. It is converted to a read only memory cell by severing a connection between at least one of said transistors within a first of said two inverters and one of said voltage supply lines such that when powered said first inverter outputs a predetermined value.
Public/Granted literature
- US20100214824A1 Converting SRAM cells to ROM Cells Public/Granted day:2010-08-26
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