Invention Grant
US07920426B2 Non-volatile memory programmable through areal capacitive coupling
有权
非易失性存储器通过面电容耦合进行编程
- Patent Title: Non-volatile memory programmable through areal capacitive coupling
- Patent Title (中): 非易失性存储器通过面电容耦合进行编程
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Application No.: US12869469Application Date: 2010-08-26
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Publication No.: US07920426B2Publication Date: 2011-04-05
- Inventor: David Liu
- Applicant: David Liu
- Applicant Address: US NV Zephyr Cove
- Assignee: Jonker LLC
- Current Assignee: Jonker LLC
- Current Assignee Address: US NV Zephyr Cove
- Agent J. Nicholas Gross
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A programmable non-volatile device is made which uses a floating gate that functions as a FET gate that overlaps a portion of a source/drain region. This allows a programming voltage for the device to be imparted to the floating gate through capacitive coupling, thus changing the state of the device. The invention can be used in environments such as data encryption, reference trimming, manufacturing ID, security ID, and many other applications.
Public/Granted literature
- US20100322010A1 NON-VOLATILE MEMORY PROGRAMMABLE THROUGH AREAL CAPACITIVE COUPLING Public/Granted day:2010-12-23
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