Invention Grant
- Patent Title: Address control circuit of semiconductor memory apparatus
- Patent Title (中): 半导体存储装置的地址控制电路
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Application No.: US12494474Application Date: 2009-06-30
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Publication No.: US07920437B2Publication Date: 2011-04-05
- Inventor: Sun Mo An
- Applicant: Sun Mo An
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2009-0034181 20090420
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
An address control circuit for a semiconductor memory apparatus so as to make a refresh operation test possible by designating a refresh address is presented. The circuit includes a buffer block, a decoder, and a latch block. The buffer block receives coding information coded testing address information in accordance to a test signal. The decoder generates a test refresh address by decoding the coding information. The latch block latches the test refresh address depending on the test signal.
Public/Granted literature
- US20100265784A1 ADDRESS CONTROL CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2010-10-21
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