Invention Grant
US07920437B2 Address control circuit of semiconductor memory apparatus 有权
半导体存储装置的地址控制电路

  • Patent Title: Address control circuit of semiconductor memory apparatus
  • Patent Title (中): 半导体存储装置的地址控制电路
  • Application No.: US12494474
    Application Date: 2009-06-30
  • Publication No.: US07920437B2
    Publication Date: 2011-04-05
  • Inventor: Sun Mo An
  • Applicant: Sun Mo An
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: Ladas & Parry LLP
  • Priority: KR10-2009-0034181 20090420
  • Main IPC: G11C8/00
  • IPC: G11C8/00
Address control circuit of semiconductor memory apparatus
Abstract:
An address control circuit for a semiconductor memory apparatus so as to make a refresh operation test possible by designating a refresh address is presented. The circuit includes a buffer block, a decoder, and a latch block. The buffer block receives coding information coded testing address information in accordance to a test signal. The decoder generates a test refresh address by decoding the coding information. The latch block latches the test refresh address depending on the test signal.
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