Invention Grant
US07920438B2 Semiconductor memory device having the operating voltage of the memory cell controlled
有权
具有控制存储单元的工作电压的半导体存储器件
- Patent Title: Semiconductor memory device having the operating voltage of the memory cell controlled
- Patent Title (中): 具有控制存储单元的工作电压的半导体存储器件
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Application No.: US12003970Application Date: 2008-01-04
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Publication No.: US07920438B2Publication Date: 2011-04-05
- Inventor: Masanao Yamaoka , Kenichi Osada
- Applicant: Masanao Yamaoka , Kenichi Osada
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, P.C.
- Priority: JPP2002-156646 20020530
- Main IPC: G11C11/413
- IPC: G11C11/413 ; G11C11/4193 ; G11C5/14 ; G11C7/24
Abstract:
An SRAM circuit operates at a reduced operation margin, especially at a low operating voltage by increasing or optimizing the operation margin of the SRAM circuit. The threshold voltage of the produced transistor in the SRAM circuit is detected to compare the operating voltage of a memory cell with the operating voltage of a peripheral circuit in order to adjust it to the optimum value, and the substrate bias voltage is further controlled.
Public/Granted literature
- US20080117692A1 Semiconductor memory device having the operating voltage of the memory cell controlled Public/Granted day:2008-05-22
Information query
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