Invention Grant
US07920439B2 Semiconductor memory device using a bandgap reference circuit and a reference voltage generator for operating under a low power supply voltage
有权
使用带隙参考电路的半导体存储器件和用于在低电源电压下工作的参考电压发生器
- Patent Title: Semiconductor memory device using a bandgap reference circuit and a reference voltage generator for operating under a low power supply voltage
- Patent Title (中): 使用带隙参考电路的半导体存储器件和用于在低电源电压下工作的参考电压发生器
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Application No.: US11860779Application Date: 2007-09-25
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Publication No.: US07920439B2Publication Date: 2011-04-05
- Inventor: Noriyasu Kumazaki
- Applicant: Noriyasu Kumazaki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-261024 20060926
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G05F3/08
Abstract:
A semiconductor memory device includes a boosting power supply circuit that boosts a first voltage to a second voltage, which is higher than an external power supply. A first bandgap reference (BGR) circuit operates on the second voltage generated by the boosting power supply circuit. Thereby, the power supply circuit generates a voltage by using a bandgap reference circuit.
Public/Granted literature
- US20080239837A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-10-02
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