Invention Grant
- Patent Title: Surface-emitting laser diode and method of manufacturing the same
- Patent Title (中): 表面发射激光二极管及其制造方法
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Application No.: US12227443Application Date: 2007-06-04
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Publication No.: US07920615B2Publication Date: 2011-04-05
- Inventor: Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi
- Applicant: Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2006-159317 20060608; JP2007-123558 20070508
- International Application: PCT/JP2007/061281 WO 20070604
- International Announcement: WO2007/142184 WO 20071213
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A surface-emitting laser diode capable of being manufactured easily at low cost, and capable of stabilizing the polarization direction of laser light in one direction and achieving higher output is provided. A light emission section 20 in which a lower first DBR mirror layer 12, a lower second DBR mirror layer 13, a lower spacer layer 14, an active layer 15 including a light emission region 15A, an upper spacer layer 16, a current confinement layer 17, an upper DBR mirror layer 18 and a contact layer 19 are laminated in this order is included on a substrate 10. The lower first DBR mirror layer 12 includes an oxidation section 30 nonuniformly distributed in a direction rotating around the light emission region 15A in a periphery of a region corresponding to the light emission region 15A. The oxidation section 30 includes a pair of multilayer films 31 and 32, and is formed by oxidizing a low refractive index layer 12A. Thereby, an anisotropic stress according to nonuniform distributions of the multilayer films 31 and 32 is generated in the active layer 15.
Public/Granted literature
- US20090129417A1 Surface-Emitting Laser Diode and Method of Manufacturing the Same Public/Granted day:2009-05-21
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