Invention Grant
US07921340B2 Nonvolatile memory device, nonvolatile memory system, and defect management method for nonvolatile memory device
有权
非易失性存储器件，非易失性存储器系统以及用于非易失性存储器件的缺陷管理方法
- Patent Title: Nonvolatile memory device, nonvolatile memory system, and defect management method for nonvolatile memory device
- Patent Title (中): 非易失性存储器件，非易失性存储器系统以及用于非易失性存储器件的缺陷管理方法
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Application No.: US12160972Application Date: 2006-11-30
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Publication No.: US07921340B2Publication Date: 2011-04-05
- Inventor: Masahiro Nakanishi
- Applicant: Masahiro Nakanishi
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2006-012984 20060120
- International Application: PCT/JP2006/323919 WO 20061130
- International Announcement: WO2007/083449 WO 20070726
- Main IPC: G11C29/00
- IPC: G11C29/00
Abstract:
A life parameter generator generates life parameters related to the life of a nonvolatile memory device by using parameters related to allowable capacity for memory defect and occurrence capacity for memory defect. The life parameters are stored in a life parameter storing block of a nonvolatile memory. An access device reads and displays the stored life parameters. Thus, the user can precisely know the life of the nonvolatile memory device or the moment when a device having a built in nonvolatile memory such as a portable audio becomes unusable.
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