Invention Grant
- Patent Title: Method for growing single crystals of metals
- Patent Title (中): 生长金属单晶的方法
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Application No.: US11936954Application Date: 2007-11-08
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Publication No.: US07922812B2Publication Date: 2011-04-12
- Inventor: James R. Ciulik , Eric M. Taleff
- Applicant: James R. Ciulik , Eric M. Taleff
- Applicant Address: US NV Las Vegas
- Assignee: Intellectual Ventures Holding 40 LLC
- Current Assignee: Intellectual Ventures Holding 40 LLC
- Current Assignee Address: US NV Las Vegas
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: C30B1/06
- IPC: C30B1/06

Abstract:
A method for growing large single crystals of metals is disclosed. A polycrystalline form of a metal specimen is initially heated in a non-oxidizing environment. A minimum plastic strain is then applied to the heated metal specimen to initiate the growth of a selected grain within the heated metal specimen. Additional plastic strain is subsequently applied to the heated metal specimen to propagate the growth of the selected grain to become a large single crystal.
Public/Granted literature
- US20090120351A1 Method for Growing Single Crystals of Metals Public/Granted day:2009-05-14
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