Invention Grant
- Patent Title: Method and system for binding halide-based contaminants
- Patent Title (中): 用于粘结卤化物基污染物的方法和系统
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Application No.: US11218773Application Date: 2005-09-01
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Publication No.: US07922818B2Publication Date: 2011-04-12
- Inventor: Garo J. Derderian , Cem Basceri , Donald L. Westmoreland
- Applicant: Garo J. Derderian , Cem Basceri , Donald L. Westmoreland
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder
- Main IPC: C23C16/08
- IPC: C23C16/08 ; C23C16/06 ; C23C16/22 ; C23C16/14 ; C23F1/00 ; H01L21/306 ; C23C16/44
Abstract:
A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to remove halides, such as chlorine and chlorides, during the deposition process so that contamination of the titanium-based film is minimized. A method for regenerating the halide adsorbing material is also provided.
Public/Granted literature
- US20060070574A1 Method and system for binding halide-based contaminants Public/Granted day:2006-04-06
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