Invention Grant
- Patent Title: Method of enabling selective area plating on a substrate
- Patent Title (中): 在基板上进行选择性区域电镀的方法
-
Application No.: US11861302Application Date: 2007-09-26
-
Publication No.: US07923059B2Publication Date: 2011-04-12
- Inventor: Omar J. Bchir , Houssam Jomaa , Islam A. Salama , Yonggang Li
- Applicant: Omar J. Bchir , Houssam Jomaa , Islam A. Salama , Yonggang Li
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Kenneth A. Nelson
- Main IPC: B05D5/12
- IPC: B05D5/12 ; B05D1/32

Abstract:
A method of enabling selective area plating on a substrate includes forming a first electrically conductive layer (310) over substantially all of the substrate, covering sections of the first electrically conductive layer with a mask (410) such that the first electrically conductive layer has a masked portion and an unmasked portion, forming a second electrically conductive layer (710, 1210), the second electrically conductive layer forming only over the unmasked portion of the first electrically conductive layer, and removing the mask and the masked portion of the first electrically conductive layer. In an embodiment, the mask covering sections of the first electrically conductive layer is a non-electrically conductive substance (1010) applied with a stamp (1020). In an embodiment, the mask is a black oxide layer.
Public/Granted literature
- US20090081381A1 METHOD OF ENABLING SELECTIVE AREA PLATING ON A SUBSTRATE Public/Granted day:2009-03-26
Information query