Invention Grant
- Patent Title: Method of manufacturing fine T-shaped electrode
- Patent Title (中): 制造精细T型电极的方法
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Application No.: US11055097Application Date: 2005-02-11
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Publication No.: US07923198B2Publication Date: 2011-04-12
- Inventor: Ken Sawada
- Applicant: Ken Sawada
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2002-236543 20020814
- Main IPC: H01L21/02
- IPC: H01L21/02 ; G03F7/40
Abstract:
A method of manufacturing a fine T-shaped electrode includes a step of forming a laminated resist which includes at least a photoresist layer as an uppermost layer; a step of forming an uppermost layer opening by irradiating the laminated resist with light to pattern only the photo resist layer and form an uppermost layer opening; a step of reducing the diameter of the uppermost layer opening by coating a resist pattern thickening material on the photoresist layer; a step of forming a lowermost layer opening by transferring the uppermost layer opening formed in the photoresist layer to a lower layer of the photoresist, and penetrating the laminated resist; a step of reducing the size of the lowermost opening in the lowermost layer of the laminated resist; and a step of forming a T-shaped electrode in the opening part formed through the laminated resist.
Public/Granted literature
- US20050147923A1 Method of manufacturing fine T-shaped electrode Public/Granted day:2005-07-07
Information query
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