Invention Grant
- Patent Title: Non-volatile resistance switching memory
- Patent Title (中): 非易失性电阻切换存储器
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Application No.: US12540949Application Date: 2009-08-13
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Publication No.: US07923263B2Publication Date: 2011-04-12
- Inventor: Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
- Applicant: Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Michael J. Buchenhorner; Vazken Alexanian
- Priority: EP04405239 20040416
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.
Public/Granted literature
- US20090308313A1 NON-VOLATILE RESISTANCE SWITCHING MEMORY Public/Granted day:2009-12-17
Information query
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