Invention Grant
- Patent Title: Surface emitting laser and manufacturing method thereof
- Patent Title (中): 表面发射激光器及其制造方法
-
Application No.: US12544243Application Date: 2009-08-20
-
Publication No.: US07923275B2Publication Date: 2011-04-12
- Inventor: Shigeru Nakagawa
- Applicant: Shigeru Nakagawa
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent William Stock; Anne Vachon Dougherty
- Priority: JP2006-343177 20061220
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A surface emitting laser includes a lower Bragg reflector, a resonator and an upper Bragg reflector. The resonator is provided on top of the lower Bragg reflector and includes an active layer, a lower semiconductor layer and an upper semiconductor layer. The upper Bragg reflector is provided on top of the resonator, and includes a plurality of semiconductor layers. In this surface emitting laser, the uppermost layer among the plurality of semiconductor layers in the lower Bragg reflector forms an air gap, which is larger than the aperture of the first insulating layer, while the lowermost layer among the plurality of semiconductor layers in the upper Bragg reflector forms an air gap, which is larger than the aperture of the second insulating layer.
Public/Granted literature
- US20090311812A1 SURFACE EMITTING LASER AND MANUFACTURING METHOD THEREOF Public/Granted day:2009-12-17
Information query
IPC分类: