Invention Grant
- Patent Title: Manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US12547907Application Date: 2009-08-26
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Publication No.: US07923297B2Publication Date: 2011-04-12
- Inventor: Naoki Izumi
- Applicant: Naoki Izumi
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-012367 20060120
- Main IPC: H01L29/74
- IPC: H01L29/74

Abstract:
Size of a chipping is made small, suppressing blinding of a blade, when performing dicing of a wafer.When cutting a wafer, cutting is performed so that the portion of a V character-shaped shoulder may enter below the front surface of a wafer (depth Z2 from a substrate front surface) using the metal-bond blade which includes the abrasive particle whose fineness number is more than #3000, and whose point is V character form. By processing it in this way, cutting resistance goes up and blinding of a blade can be prevented. Hereby, the size of a chipping can be suppressed small, preventing blinding of a blade.
Public/Granted literature
- US20090317945A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2009-12-24
Information query
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