Invention Grant
- Patent Title: Patterning method for high density pillar structures
- Patent Title (中): 高密度柱结构图案化方法
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Application No.: US12686201Application Date: 2010-01-12
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Publication No.: US07923305B1Publication Date: 2011-04-12
- Inventor: Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen
- Applicant: Natalie Nguyen , Paul Wai Kie Poon , Steven J. Radigan , Michael Konevecki , Yung-Tin Chen
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: The Marbury Law Group, PLLC
- Main IPC: H01L21/82
- IPC: H01L21/82

Abstract:
A method of making a device includes forming a first sacrificial layer over an underlying layer, forming a first photoresist layer over the first sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, etching the first sacrificial layer using both the first and the second photoresist features as a mask to form first sacrificial features, forming a spacer layer over the first sacrificial features, etching the spacer layer to form spacer features and to expose the sacrificial features, removing the first sacrificial features, and etching at least part of the underlying layer using the spacer features as a mask.
Information query
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