High-k dielectric film, method of forming the same and related semiconductor device

Invention Grant

US07923336B2 High-k dielectric film, method of forming the same and related semiconductor device 有权

Title translation: 高k电介质膜，其形成方法及相关半导体器件

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Patent Title: High-k dielectric film, method of forming the same and related semiconductor device
Patent Title (中): 高k电介质膜，其形成方法及相关半导体器件
Application No.: US12609670

Application Date: 2009-10-30
Publication No.: US07923336B2

Publication Date: 2011-04-12
Inventor: Kil-Ho Lee , Chan Lim
Applicant: Kil-Ho Lee , Chan Lim
Applicant Address: DE Munich
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Munich
Agency: Brinks Hofer Gilson & Lione
Main IPC: H01L21/316
IPC: H01L21/316

High-k dielectric film, method of forming the same and related semiconductor device

Abstract:

A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.

Abstract(Chinese):

提供了高k电介质膜，形成高k电介质膜的方法以及形成相关半导体器件的方法。高k电介质膜包括具有第一氮含量和第一硅含量的金属 - 氮氧化硅的底层和具有第二氮含量和第二硅含量的金属 - 氮氧化硅的顶层。第二氮含量高于第一氮含量，第二硅含量高于第一硅含量。

Public/Granted literature

US20100047991A1 HIGH-K DIELECTRIC FILM, METHOD OF FORMING THE SAME AND RELATED SEMICONDUCTOR DEVICE Public/Granted day:2010-02-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/314	......无机层（H01L21/3105，H01L21/32优先）
H01L21/316	.......由氧化物或玻璃状氧化物或以氧化物为基础的玻璃组成的无机层