Invention Grant
- Patent Title: Manufacturing method of semiconductor devices
- Patent Title (中): 半导体器件的制造方法
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Application No.: US11576363Application Date: 2006-07-10
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Publication No.: US07923351B2Publication Date: 2011-04-12
- Inventor: Kiyoshi Arita
- Applicant: Kiyoshi Arita
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Pearne & Gordon LLP
- Priority: JP2005-201536 20050711
- International Application: PCT/JP2006/314114 WO 20060710
- International Announcement: WO2007/007883 WO 20070118
- Main IPC: H01L21/463
- IPC: H01L21/463 ; H01L21/467 ; H01L21/78

Abstract:
In a method of manufacturing semiconductor chips by dicing individual semiconductor devices from a semiconductor wafer, masks formed for plasma dicing in which a semiconductor wafer is divided by conducting plasma etching are removed by mechanical grinding using a grinding head. Accordingly, by removing the masks for plasma dicing using mechanical grinding, generation of reaction products is prevented when removing the masks, so that the dicing can be conducted without causing quality deterioration due to the accumulated particles.
Public/Granted literature
- US20090209087A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICES Public/Granted day:2009-08-20
Information query
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