Invention Grant
US07923364B2 Tunnel dielectric comprising nitrogen for use with a semiconductor device and a process for forming the device
有权
包含用于半导体器件的氮的隧道电介质和用于形成该器件的工艺
- Patent Title: Tunnel dielectric comprising nitrogen for use with a semiconductor device and a process for forming the device
- Patent Title (中): 包含用于半导体器件的氮的隧道电介质和用于形成该器件的工艺
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Application No.: US12644250Application Date: 2009-12-22
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Publication No.: US07923364B2Publication Date: 2011-04-12
- Inventor: Akira Goda
- Applicant: Akira Goda
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: H01L21/762
- IPC: H01L21/762
Abstract:
A method used during semiconductor device fabrication comprises forming at least two types of transistors. A first transistor type may comprise a CMOS transistor comprising gate oxide and having a wide active area and/or a long channel, and the second transistor type may comprise a NAND comprising tunnel oxide and having a narrow active area and/or short gate length. The transistors are exposed to a nitridation ambient. Various process embodiments and completed structures are disclosed.
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Information query
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