Invention Grant
- Patent Title: Method for forming amorphous carbon film
- Patent Title (中): 形成无定形碳膜的方法
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Application No.: US12396621Application Date: 2009-03-03
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Publication No.: US07923377B2Publication Date: 2011-04-12
- Inventor: Takao Saito , Tatsuya Terazawa
- Applicant: Takao Saito , Tatsuya Terazawa
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown
- Priority: JP2008-083520 20080327
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
An amorphous carbon film forming apparatus includes a supporting electrode that is connected to ground and supports a substrate, a counter electrode that is disposed so as to face the supporting electrode and has a mixed-gas injection orifice, a chamber containing the supporting electrode and the counter electrode, and a DC pulse generator having a pulse source that applies a DC pulse voltage between the supporting electrode and the counter electrode. An amorphous carbon film is formed by supplying a mixed gas between the supporting electrode and the counter electrode such that the percentage of the acetylene gas relative to the carrier gas is 0.05% by volume or more and 10% by volume or less, and by generating plasma while a DC pulse voltage having a pulse width of 0.1 μsec or more and 5.0 μsec or less is applied to the counter electrode.
Public/Granted literature
- US20090246407A1 METHOD FOR FORMING AMORPHOUS CARBON FILM Public/Granted day:2009-10-01
Information query
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