Invention Grant
- Patent Title: Temperature measuring device and method for measuring wafer-type thermometers
- Patent Title (中): 温度测量装置及测量晶圆型温度计的方法
-
Application No.: US11645616Application Date: 2006-12-27
-
Publication No.: US07923665B2Publication Date: 2011-04-12
- Inventor: Toshiyuki Matsumoto , Tomohide Minami
- Applicant: Toshiyuki Matsumoto , Tomohide Minami
- Applicant Address: JP
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP
- Agency: Finnegan, Henderson Farabow, Garrett & Dunner, LLP
- Priority: JP2005-376948 20051228
- Main IPC: H05B1/02
- IPC: H05B1/02

Abstract:
An object of the present invention is to provide a wafer-type thermometer capable of adapting itself to automation and improving the heat resistance to measure temperature distribution of a wafer and a method for manufacturing the wafer-type thermometer. A plurality of temperature sensors are arranged in regions formed by segmenting the upper surface of a wafer into a plurality of regions. Output signals from the plurality of temperature sensors are converted into temperature data by a conversion processing circuit where further processes the temperature data. The conversion processing circuit is housed in a storage room surrounded by a heat insulating member made of a nanocrystalline silicon layer.
Public/Granted literature
- US20070147468A1 Temperature measuring device and method for measuring wafer-type thermometers Public/Granted day:2007-06-28
Information query