Invention Grant
- Patent Title: Organic thin film transistor with dual layer electrodes
- Patent Title (中): 具有双层电极的有机薄膜晶体管
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Application No.: US11564438Application Date: 2006-11-29
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Publication No.: US07923718B2Publication Date: 2011-04-12
- Inventor: Yiliang Wu , Beng S. Ong
- Applicant: Yiliang Wu , Beng S. Ong
- Applicant Address: US CT Norwalk
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: US CT Norwalk
- Agency: Fay Sharpe LLP
- Main IPC: H01L29/08
- IPC: H01L29/08
Abstract:
A thin-film transistor (TFT) with dual-layer source and drain electrodes is provided. Each source and drain electrode comprises a first layer and a second layer. The first layer has a work function which differs from the energy level of the semiconductor by at least 0.5 eV and the second layer has a work function matching the energy level of the semiconductor. The semiconductor has a short channel length.
Public/Granted literature
- US20080121869A1 ORGANIC THIN FILM TRANSISTOR WITH DUAL LAYER ELECTRODES Public/Granted day:2008-05-29
Information query
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