Invention Grant
US07923719B2 Semiconductor memory device wherein wiring contact is made through an opening in an organic compound layer
有权
半导体存储器件，其中通过有机化合物层中的开口制造布线接触
- Patent Title: Semiconductor memory device wherein wiring contact is made through an opening in an organic compound layer
- Patent Title (中): 半导体存储器件，其中通过有机化合物层中的开口制造布线接触
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Application No.: US11790348Application Date: 2007-04-25
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Publication No.: US07923719B2Publication Date: 2011-04-12
- Inventor: Shunpei Yamazaki , Kiyoshi Kato , Ryoji Nomura
- Applicant: Shunpei Yamazaki , Kiyoshi Kato , Ryoji Nomura
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-127124 20060428
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L51/40 ; H01L21/8242
Abstract:
In the present invention, a semiconductor device that has a nonvolatile memory element to which data can be written at times other than during manufacture and in which forgery and the like performed by rewriting of data can be prevented is provided. In addition, a semiconductor device in which a high level of integration is possible is provided. Furthermore, a semiconductor device in which miniaturization is possible is provided. In a semiconductor device having a memory element that includes a first conductive layer, a second conductive layer, and an organic compound layer interposed between the first conductive layer and the second conductive layer; the second conductive layer is connected to a wiring, formed in the same way as the first conductive layer is formed, through an opening formed in the organic compound layer.
Public/Granted literature
- US20070254432A1 Semiconductor device and manufacturing method thereof Public/Granted day:2007-11-01
Information query
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