Invention Grant
- Patent Title: TFT substrate for display device with a semiconductor layer that extends beyond the gate electrode structure and manufacturing method of the same
- Patent Title (中): 具有延伸超过栅电极结构的半导体层的显示装置用TFT基板及其制造方法
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Application No.: US11352181Application Date: 2006-02-10
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Publication No.: US07923726B2Publication Date: 2011-04-12
- Inventor: Byoung-sun Na , Sang-ki Kwak , Dong-gyu Kim , Kyung-phil Lee
- Applicant: Byoung-sun Na , Sang-ki Kwak , Dong-gyu Kim , Kyung-phil Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2005-0011575 20050211
- Main IPC: H01L31/113
- IPC: H01L31/113

Abstract:
Disclosed is a TFT substrate for a display apparatus comprising a gate wiring including a gate electrode, a data wiring including a data line, a source electrode connected to the data line, and a drain electrode connected to a pixel electrode, and a semiconductor layer disposed between the gate wiring and the data wiring, wherein the semiconductor layer under the drain electrode is disposed within an area overlapping the gate electrode and the semiconductor layer under the source electrode extends outward to an area not overlapping the gate electrode. Advantageously, the present disclosure provides a TFT substrate for a display apparatus having a high aperture ratio and causing less afterimaging, and a manufacturing method of the same.
Public/Granted literature
- US20060180837A1 TFT substrate for display device and manufacturing method of the same Public/Granted day:2006-08-17
Information query
IPC分类: