Semiconductor device including capacitorless RAM

Invention Grant

US07923766B2 Semiconductor device including capacitorless RAM 有权

Title translation: 半导体器件包括无电容RAM

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Patent Title: Semiconductor device including capacitorless RAM
Patent Title (中): 半导体器件包括无电容RAM
Application No.: US12483447

Application Date: 2009-06-12
Publication No.: US07923766B2

Publication Date: 2011-04-12
Inventor: Masayoshi Saito
Applicant: Masayoshi Saito
Applicant Address: JP Tokyo
Assignee: Elpida Memory, Inc
Current Assignee: Elpida Memory, Inc
Current Assignee Address: JP Tokyo
Agency: Young & Thompson
Priority: JP2008-154374 20080612
Main IPC: H01L21/311
IPC: H01L21/311 ; G11C16/04

Semiconductor device including capacitorless RAM

Abstract:

There is provided a semiconductor device including a capacitorless RAM. The semiconductor device includes a field effect transistor (FET) having a floating body structure. FET includes a channel body region arranged in a first region comprising a first semiconductor (e.g., p-SiGe) having a given band gap and a second region comprising a second semiconductor (e.g., n-Si) having a larger band gap than the first semiconductor.

Abstract(Chinese):

提供了包括无电容RAM的半导体器件。半导体器件包括具有浮体结构的场效应晶体管（FET）。 FET包括布置在包括具有给定带隙的第一半导体（例如，p-SiGe）的第一区域中的沟道体区域，以及包括具有比第一区域具有更大带隙的第二半导体（例如，n-Si）的第二区域半导体。

Public/Granted literature

US20090310431A1 SEMICONDUCTOR DEVICE INCLUDING CAPACITORLESS RAM Public/Granted day:2009-12-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀