Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11263182Application Date: 2005-10-31
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Publication No.: US07923779B2Publication Date: 2011-04-12
- Inventor: Shunpei Yamazaki , Hiroki Adachi
- Applicant: Shunpei Yamazaki , Hiroki Adachi
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP10-318197 19981109; JP10-344893 19981117
- Main IPC: H01L27/01
- IPC: H01L27/01
Abstract:
The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate electrode and a second electrode being in contact with the first gate electrode and a gate insulating film. Further, the LDD is formed by using the first gate electrode as a mask, and source and drain regions are formed by using the second gate electrode as the mask. Then, the LDD overlapping with the second gate electrode is formed. This structure provides the thin film transistor with high reliability.
Public/Granted literature
- US20060081931A1 Semiconductor device and method of manufacturing the same Public/Granted day:2006-04-20
Information query
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