Invention Grant
- Patent Title: Semiconductor device including resonance circuit
- Patent Title (中): 包括谐振电路的半导体装置
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Application No.: US11440030Application Date: 2006-05-25
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Publication No.: US07923796B2Publication Date: 2011-04-12
- Inventor: Yutaka Shionoiri , Tomoaki Atsumi , Hiroki Inoue
- Applicant: Yutaka Shionoiri , Tomoaki Atsumi , Hiroki Inoue
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-156108 20050527
- Main IPC: H01L27/14
- IPC: H01L27/14 ; G08B13/14

Abstract:
It is an object of the present invention to provide a semiconductor device in which an arrangement area of capacitance can be reduced and resonance frequency can be easily adjusted. The semiconductor device includes an antenna and a resonance circuit including a capacitor connected to the antenna in parallel where the capacitor is formed by connecting x pieces of first capacitor (x is an arbitrary natural number), y pieces of second capacitor (y is an arbitrary natural number), and z pieces of third capacitor (z is an arbitrary natural number) in parallel; and the first capacitor, the second capacitor, and the third capacitor have different capacitance values from each other. It is preferable that each of the first capacitor, the second capacitor, and the third capacitor be a MIS capacitor. Further, at least one of the first capacitor, the second capacitor, and the third capacitor is preferably formed by connecting a plurality of capacitors in parallel.
Public/Granted literature
- US20060267771A1 Semiconductor device Public/Granted day:2006-11-30
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