Invention Grant
- Patent Title: Semiconductor device and electronic device
- Patent Title (中): 半导体器件和电子器件
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Application No.: US12000824Application Date: 2007-12-18
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Publication No.: US07923800B2Publication Date: 2011-04-12
- Inventor: Atsushi Hirose , Hideaki Shishido
- Applicant: Atsushi Hirose , Hideaki Shishido
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-351877 20061227
- Main IPC: H01L31/0232
- IPC: H01L31/0232

Abstract:
The present invention has a photodiode and a circuit used to amplify the output of the photodiode. Two terminals are formed over the photodiode and circuit with an insulating layer interposed therebetween, and a dummy electrode with a larger area than that of either of the two terminals is formed thereover, adjacent to the two terminals. The dummy electrode is not connected to the photodiode or to the circuit of the semiconductor device. Because the dummy electrode has a wide area, damage due to electrostatic discharge occurs in the dummy electrode more easily than in the two terminals; thus, damage due to electrostatic discharge can be prevented from occurring in the semiconductor device.
Public/Granted literature
- US20080156368A1 Semiconductor device and electronic device Public/Granted day:2008-07-03
Information query
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