Invention Grant
- Patent Title: Materials, systems and methods for optoelectronic devices
- Patent Title (中): 光电器件的材料,系统和方法
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Application No.: US12106256Application Date: 2008-04-18
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Publication No.: US07923801B2Publication Date: 2011-04-12
- Inventor: Hui Tian , Edward Hartley Sargent
- Applicant: Hui Tian , Edward Hartley Sargent
- Applicant Address: US CA Menlo Park
- Assignee: InVisage Technologies, Inc.
- Current Assignee: InVisage Technologies, Inc.
- Current Assignee Address: US CA Menlo Park
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
Public/Granted literature
- US20090152664A1 Materials, Systems and Methods for Optoelectronic Devices Public/Granted day:2009-06-18
Information query
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