Invention Grant
- Patent Title: Edge termination with improved breakdown voltage
- Patent Title (中): 边缘端接，具有改善的击穿电压
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Application No.: US12367716Application Date: 2009-02-09
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Publication No.: US07923804B2Publication Date: 2011-04-12
- Inventor: Jun Zeng , Mohamed N. Darwish , Shih-Tzung Su
- Applicant: Jun Zeng , Mohamed N. Darwish , Shih-Tzung Su
- Applicant Address: US CA Santa Clara
- Assignee: MaxPower Semiconductor Inc.
- Current Assignee: MaxPower Semiconductor Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Storm LLP
- Agent Robert O. Groover, III
- Main IPC: H01L27/095
- IPC: H01L27/095 ; H01L29/47 ; H01L29/812 ; H01L31/07 ; H01L31/108
Abstract:
A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field plate configuration operative to enhance any spreading of any depletion layer located at an edge of a main PN junction of the N-P-N sandwich structure.
Public/Granted literature
- US20090206913A1 Edge Termination with Improved Breakdown Voltage Public/Granted day:2009-08-20
Information query
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