A semiconductor device capable of restricting a void growth in a copper wiring. The semiconductor device comprises a semiconductor substrate, an insulation layer formed above the semiconductor substrate, a barrier metal layer that is a first damascene wiring buried in the insulation layer, defines the bottom face and the side faces, and also defines a first hollow part at the inner side, a copper wiring layer disposed in the first hollow part and defining a second hollow part at the inner side, a first damascene wiring disposed in the second hollow part and containing an auxiliary barrier metal layer separated from the barrier metal layer, and an insulating copper diffusion preventing film disposed on the first damascene wiring and the insulation layer.