Invention Grant
- Patent Title: Semiconductor device including an inductor having soft magnetic thin film patterns and a fabricating method of the same
- Patent Title (中): 包括具有软磁薄膜图案的电感器的半导体器件及其制造方法
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Application No.: US11656451Application Date: 2007-01-23
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Publication No.: US07923814B2Publication Date: 2011-04-12
- Inventor: Joo-hyun Jeong , Chul-ho Chung
- Applicant: Joo-hyun Jeong , Chul-ho Chung
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2006-0007380 20060124
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01F27/28

Abstract:
A semiconductor device includes an interlayer insulating film and an inductor. The inductor includes a first soft magnetic thin film pattern formed on the interlayer insulating film, the first soft magnetic film comprising a) at least one material selected from Fe, Co, Ni, or alloys thereof b) at least one element selected from Ti, Hf, or B, and c) N, a metal film pattern formed on the first soft magnetic thin film pattern and a second soft magnetic thin film pattern formed on the metal film pattern, the second soft magnetic thin film pattern comprising a) at least one material selected from Fe, Co, Ni, or alloys thereof; b) at least one element selected from Ti, Hf, or B; and c) N. Edges of the first soft magnetic thin film pattern, edges of the metal film pattern and edges of the second soft magnetic thin film pattern are vertically aligned.
Public/Granted literature
- US20070170590A1 Method of fabricating semiconductor device Public/Granted day:2007-07-26
Information query
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