Invention Grant
US07923815B2 DRAM having deep trench capacitors with lightly doped buried plates
有权
DRAM具有具有轻掺杂掩埋板的深沟槽电容器
- Patent Title: DRAM having deep trench capacitors with lightly doped buried plates
- Patent Title (中): DRAM具有具有轻掺杂掩埋板的深沟槽电容器
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Application No.: US11969986Application Date: 2008-01-07
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Publication No.: US07923815B2Publication Date: 2011-04-12
- Inventor: Geng Wang , Kangguo Cheng , Johnathan E. Faltermeier , Paul C. Parries
- Applicant: Geng Wang , Kangguo Cheng , Johnathan E. Faltermeier , Paul C. Parries
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Joseph P. Abate; Howard M. Cohn
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
By controlling buried plate doping level and bias condition, different capacitances can be obtained from capacitors on the same chip with the same layout and deep trench process. The capacitors may be storage capacitors of DRAM/eDRAM cells. The doping concentration may be less than 3E19cm−3, a voltage difference between the biases of the buried electrodes may be at least 0.5V, and a capacitance of one capacitor may be at least 1.2 times, such as 2.0 times the capacitance of another capacitor.
Public/Granted literature
- US20090174031A1 DRAM HAVING DEEP TRENCH CAPACITORS WITH LIGHTLY DOPED BURIED PLATES Public/Granted day:2009-07-09
Information query
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