Semiconductor device having capacitor element

Invention Grant

US07923816B2 Semiconductor device having capacitor element 失效

Title translation: 具有电容器元件的半导体器件

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Patent Title: Semiconductor device having capacitor element
Patent Title (中): 具有电容器元件的半导体器件
Application No.: US12325294

Application Date: 2008-12-01
Publication No.: US07923816B2

Publication Date: 2011-04-12
Inventor: Ken Inoue , Tomoko Inoue
Applicant: Ken Inoue , Tomoko Inoue
Applicant Address: JP Kanagawa
Assignee: Renesas Electronics Corporation
Current Assignee: Renesas Electronics Corporation
Current Assignee Address: JP Kanagawa
Agency: Young & Thompson
Priority: JP2007-309058 20071129
Main IPC: H01L29/92
IPC: H01L29/92

Semiconductor device having capacitor element

Abstract:

Provided is a semiconductor device which includes a capacitor element having a flat-plate-type lower electrode provided over a semiconductor substrate, a flat-plate-type TiN film provided over the lower electrode in parallel therewith, and a capacitor film provided between the lower electrode and the TiN film; and a first Cu plug brought into contact with the bottom surface of the lower electrode, and is composed of a metal material, wherein the capacitor film has a film which contains an organic molecule as a constituent.

Abstract(Chinese):

提供一种半导体器件，其包括具有设置在半导体衬底上的平板型下电极的电容器元件，与其平行设置在下电极上的平板型TiN膜，以及设置在下部电极之间的电容器膜电极和TiN膜; 以及与下部电极的底面接触的第一Cu插塞，由金属材料构成，其中电容器膜具有含有有机分子作为成分的膜。

Public/Granted literature

US20090140386A1 SEMICONDUCTOR DEVICE HAVING CAPACITOR ELEMENT Public/Granted day:2009-06-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/86	..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/92	...有电位跃变势垒或表面势垒的电容器