Invention Grant
- Patent Title: Interlayer insulating film, wiring structure and electronic device and methods of manufacturing the same
- Patent Title (中): 层间绝缘膜，布线结构和电子器件及其制造方法
-
Application No.: US12514173Application Date: 2007-11-08
-
Publication No.: US07923819B2Publication Date: 2011-04-12
- Inventor: Tadahiro Ohmi , Seiji Yasuda , Atsutoshi Inokuchi , Takaaki Matsuoka , Kohei Kawamura
- Applicant: Tadahiro Ohmi , Seiji Yasuda , Atsutoshi Inokuchi , Takaaki Matsuoka , Kohei Kawamura
- Applicant Address: JP Miyagi JP Tokyo
- Assignee: National Iniversity Corporation Tohoku University,Tokyo Electron Limited
- Current Assignee: National Iniversity Corporation Tohoku University,Tokyo Electron Limited
- Current Assignee Address: JP Miyagi JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2006-304534 20061109; JP2007-038584 20070219
- International Application: PCT/JP2007/071734 WO 20071108
- International Announcement: WO2008/056748 WO 20080515
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.
Public/Granted literature
- US20100032844A1 INTERLAYER INSULATING FILM, WIRING STRUCTURE AND ELECTRONIC DEVICE AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2010-02-11
Information query
IPC分类:
