Invention Grant
- Patent Title: Method of producing a porous dielectric element and corresponding dielectric element
- Patent Title (中): 生产多孔电介质元件和相应电介质元件的方法
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Application No.: US12765840Application Date: 2010-04-22
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Publication No.: US07923820B2Publication Date: 2011-04-12
- Inventor: Simon Jeannot , Laurent Favennec
- Applicant: Simon Jeannot , Laurent Favennec
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Agency: Gardere Wynne Sewell LLP
- Priority: FR0655558 20061215
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
A porous dielectric element is produced by forming a first dielectric and a second dielectric. The second dielectric is dispersed in the first dielectric. The second dielectric is then removed from the second dielectric by using a chemical dissolution. The removal of the second dielectric from the first dielectric leaves pores in the first dielectric. The pores, which are filled with air, improve the overall dielectric constant of the resulting dielectric element.
Public/Granted literature
- US20100200964A1 METHOD OF PRODUCING A POROUS DIELECTRIC ELEMENT AND CORRESPONDING DIELECTRIC ELEMENT Public/Granted day:2010-08-12
Information query
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