Invention Grant
- Patent Title: Semiconductor module
- Patent Title (中): 半导体模块
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Application No.: US12086715Application Date: 2006-12-11
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Publication No.: US07923833B2Publication Date: 2011-04-12
- Inventor: Yuichi Furukawa , Shinobu Yamauchi , Nobuhiro Wakabayashi , Shintaro Nakagawa , Keiji Toh , Eiji Kono , Kota Otoshi , Katsufumi Tanaka
- Applicant: Yuichi Furukawa , Shinobu Yamauchi , Nobuhiro Wakabayashi , Shintaro Nakagawa , Keiji Toh , Eiji Kono , Kota Otoshi , Katsufumi Tanaka
- Applicant Address: JP Minato-ku, Tokyo JP Aichi-ken
- Assignee: Showa Denko K.K.,Kabushiki Kaisha Toyota Jidoshokki
- Current Assignee: Showa Denko K.K.,Kabushiki Kaisha Toyota Jidoshokki
- Current Assignee Address: JP Minato-ku, Tokyo JP Aichi-ken
- Agency: Locke Lord Bissell & Liddell LLP
- Priority: JP2005-366975 20051220
- International Application: PCT/JP2006/324683 WO 20061211
- International Announcement: WO2007/072700 WO 20070628
- Main IPC: H01L23/06
- IPC: H01L23/06

Abstract:
A semiconductor module 10 includes a ceramic substrate having a front surface on which a semiconductor element 12 is mounted and a rear surface on the opposite side of the front surface, a front metal plate 15 joined to the front surface, a rear metal plate 16 joined to the rear surface, and a heat sink 13 joined to the rear metal plate 16. The rear metal plate 16 includes a joint surface 16b that faces the heat sink 13. The joint surface 16b includes a joint area and a non-joint area. The non-joint area includes recesses 18 which extend in the thickness direction of the rear metal plate 16. The joint area of the rear metal plate 16 is in a range from 65% to 85% of the total area of the joint surface 16b on the rear metal plate 16. As a result, excellent heat dissipating performance can be achieved while occurrence of distortion and cracking due to thermal stress is prevented.
Public/Granted literature
- US20090174063A1 Semiconductor Module Public/Granted day:2009-07-09
Information query
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