Invention Grant
US07923841B2 Method for bonding semiconductor structure with substrate and high efficiency photonic device manufactured by using the same method
有权
通过使用相同的方法制造的半导体结构与基板和高效光子器件接合的方法
- Patent Title: Method for bonding semiconductor structure with substrate and high efficiency photonic device manufactured by using the same method
- Patent Title (中): 通过使用相同的方法制造的半导体结构与基板和高效光子器件接合的方法
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Application No.: US12426015Application Date: 2009-04-17
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Publication No.: US07923841B2Publication Date: 2011-04-12
- Inventor: Chuan-Cheng Tu
- Applicant: Chuan-Cheng Tu
- Applicant Address: TW Tainan
- Assignee: RGB Consulting Co., Ltd.
- Current Assignee: RGB Consulting Co., Ltd.
- Current Assignee Address: TW Tainan
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW97114263A 20080418
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/30
Abstract:
A method for bonding a semiconductor structure with a substrate and a high efficiency photonic device manufactured by using the same method are disclosed. The method comprises steps of: providing a semiconductor structure and a substrate; forming a composite bonding layer on the semiconductor structure; and bonding the substrate with the composite bonding layer on the semiconductor structure to form a composite alloyed bonding layer. The semiconductor structure includes a compound semiconductor substrate and a high efficiency photonic device is produced after the compound semiconductor substrate is removed. Besides, the composite bonding layer can be formed on the substrate or formed on both the semiconductor structure and substrate simultaneously.
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