Invention Grant
US07923844B2 Semiconductor devices including voltage switchable materials for over-voltage protection
失效
半导体器件包括用于过电压保护的电压可切换材料
- Patent Title: Semiconductor devices including voltage switchable materials for over-voltage protection
- Patent Title (中): 半导体器件包括用于过电压保护的电压可切换材料
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Application No.: US11602881Application Date: 2006-11-21
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Publication No.: US07923844B2Publication Date: 2011-04-12
- Inventor: Lex Kosowsky
- Applicant: Lex Kosowsky
- Applicant Address: US CA San Jose
- Assignee: Shocking Technologies, Inc.
- Current Assignee: Shocking Technologies, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Carr & Ferrell LLP
- Main IPC: H01L23/28
- IPC: H01L23/28

Abstract:
Semiconductor devices are provided that employ voltage switchable materials for over-voltage protection. In various implementations, the voltage switchable materials are substituted for conventional die attach adhesives, underfill layers, and encapsulants. While the voltage switchable material normally functions as a dielectric cmaterial, during an over-voltage event the voltage switchable material becomes electrically conductive and can conduct electricity to ground. Accordingly, the voltage switchable material is in contact with a path to ground such as a grounded trace on a substrate, or a grounded solder ball in a flip-chip package.
Public/Granted literature
- US20070114640A1 Semiconductor devices including voltage switchable materials for over-voltage protection Public/Granted day:2007-05-24
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