Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US12065468Application Date: 2006-08-29
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Publication No.: US07923982B2Publication Date: 2011-04-12
- Inventor: Masaya Sumita
- Applicant: Masaya Sumita
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-254974 20050902
- International Application: PCT/JP2006/316930 WO 20060829
- International Announcement: WO2007/026670 WO 20070308
- Main IPC: H03K5/12
- IPC: H03K5/12 ; H03L5/00

Abstract:
A semiconductor integrated circuit is provided with a voltage level detector which detects a voltage level of a signal wire, and a transition time detector which detects a time length of a transition period during which the signal wire changes from an inactive voltage state to an active voltage state based on the voltage level detected by the voltage level detector. The voltage level detector detects the voltage level of the signal wire during the transition period.
Public/Granted literature
- US20090230947A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2009-09-17
Information query
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