Invention Grant
US07924065B2 Control circuit for a power field-effect transistor and method for configuring a control circuit for a power field-effect transistor
有权
用于功率场效应晶体管的控制电路和用于配置功率场效应晶体管的控制电路的方法
- Patent Title: Control circuit for a power field-effect transistor and method for configuring a control circuit for a power field-effect transistor
- Patent Title (中): 用于功率场效应晶体管的控制电路和用于配置功率场效应晶体管的控制电路的方法
-
Application No.: US12175049Application Date: 2008-07-17
-
Publication No.: US07924065B2Publication Date: 2011-04-12
- Inventor: Ralf Förster , Marco Well , Gunther Wolfarth
- Applicant: Ralf Förster , Marco Well , Gunther Wolfarth
- Applicant Address: DE Hannover
- Assignee: Continental Automotive GmbH
- Current Assignee: Continental Automotive GmbH
- Current Assignee Address: DE Hannover
- Agency: King & Spalding L.L.P.
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
An integrated circuit has a control circuit (2) for a power field-effect transistor (3), wherein the integrated circuit has a first input (202) for receiving a control signal (CE) and an output to switch the field-effect transistor (3) on or off. The control circuit further has a driver circuit for providing a voltage level at the output in response of the control signal. A second input is provided for receiving a configuration signal, the configuration signal for configuring the voltage level being provided by the driver circuit in response to the control signal.
Public/Granted literature
Information query