Invention Grant
US07924073B2 Semiconductor memory device having back-bias voltage in stable range
失效
具有稳定范围的背偏电压的半导体存储器件
- Patent Title: Semiconductor memory device having back-bias voltage in stable range
- Patent Title (中): 具有稳定范围的背偏电压的半导体存储器件
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Application No.: US12165040Application Date: 2008-06-30
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Publication No.: US07924073B2Publication Date: 2011-04-12
- Inventor: Jae-Boum Park
- Applicant: Jae-Boum Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2007-0138961 20071227
- Main IPC: H03L7/06
- IPC: H03L7/06

Abstract:
A back-bias voltage generating circuit controls the back-bias voltage in a predetermined range by detecting the back-bias voltage in case the back-bias voltage level decreases below a predetermined target level. The circuit includes first and second detecting units outputting respective detection signals, which detect a voltage level of the terminal based on respective higher first and lower second target levels. An oscillator generates an oscillation signal that oscillates at a predetermined frequency, in response to a detection signal of the first voltage detecting unit. A charge pumping unit drives the terminal by performing charge pumping in response to the oscillation signal. A voltage level control unit controls the voltage level of the terminal in response to the detection signals, whereby the terminal's voltage level is lower than the first target level and higher than the second target level.
Public/Granted literature
- US20090167425A1 SEMICONDUCTOR MEMORY DEVICE HAVING BACK-BIAS VOLTAGE IN STABLE RANGE Public/Granted day:2009-07-02
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