Invention Grant
- Patent Title: Rapid recovery circuit
- Patent Title (中): 快速恢复电路
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Application No.: US12513776Application Date: 2008-06-04
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Publication No.: US07924188B2Publication Date: 2011-04-12
- Inventor: Michiko Tokumaru , Heiji Ikoma
- Applicant: Michiko Tokumaru , Heiji Ikoma
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-152839 20070608
- International Application: PCT/JP2008/001421 WO 20080604
- International Announcement: WO2008/152785 WO 20081218
- Main IPC: H03M1/00
- IPC: H03M1/00

Abstract:
When a semiconductor circuit, in which a stabilizing capacitor 2 for stabilizing a reference voltage Vbias is connected to a reference voltage terminal RT, recovers from a power down state to an operational state, a current mirror circuit 40 provides current mirroring of a current Ia of a first current path Ph1, which generates an OFF threshold voltage ref1 of a hysteresis comparator 1, to generate a current Ib of a second current path Ph2, which generates the reference voltage Vbias. The reference voltage Vbias is input to the comparator 1 as an input voltage vin. When the reference voltage Vbias becomes equal to the OFF threshold voltage ref1, the comparator 1 immediately stops the charging of the stabilizing capacitor 2 by a current source I1.
Public/Granted literature
- US20100007536A1 RAPID RECOVERY CIRCUIT Public/Granted day:2010-01-14
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