Invention Grant
- Patent Title: Over-voltage protection circuit
- Patent Title (中): 过电压保护电路
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Application No.: US12251961Application Date: 2008-10-15
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Publication No.: US07924540B2Publication Date: 2011-04-12
- Inventor: Yoichi Tamegai
- Applicant: Yoichi Tamegai
- Applicant Address: JP
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP
- Agency: Cantor Colburn LLP
- Priority: JP2007-268282 20071015
- Main IPC: H02H3/20
- IPC: H02H3/20 ; H02H9/04 ; H01H9/30 ; H01H1/50 ; H01H1/60 ; H01H33/00

Abstract:
A main transistor and a reverse current prevention transistor are provided in series between an input terminal and an output terminal. An input diode is provided between a connection point of the reverse current prevention transistor and the main transistor and a reference voltage terminal in such a direction that the anode becomes the reference voltage terminal side. A control unit controls the gate voltage of the main transistor according to a DC voltage. The reverse current prevention transistor is arranged in such a direction that the anode of its body diode becomes the input terminal side. The reverse current prevention transistor is biased to be turned on in a normal state that the input terminal becomes high potential and the reference voltage terminal becomes low potential.
Public/Granted literature
- US20090097181A1 OVER-VOLTAGE PROTECTION CIRCUIT Public/Granted day:2009-04-16
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