Invention Grant
- Patent Title: High-density semiconductor device
- Patent Title (中): 高密度半导体器件
-
Application No.: US11701104Application Date: 2007-01-31
-
Publication No.: US07924595B2Publication Date: 2011-04-12
- Inventor: Kie Bong Koo
- Applicant: Kie Bong Koo
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Cooper & Dunham LLP
- Agent John P. White
- Priority: KR10-2006-0105248 20061027
- Main IPC: H03K19/094
- IPC: H03K19/094

Abstract:
A high-density semiconductor device includes a first input/output line connected among a plurality of banks on a core area storing data, so that it transmits data, a second input/output line connected to a data pad capable of performing data input/output operations at a Peri-area, so that it transmits data, a first repeater connected between the first input/output line and the second input/output line, for transmitting data of the first input/output line to the second input/output line in response to a read enable signal enabled by a read command, and a second repeater connected between the first input/output line and the second input/output line, for transmitting data of the second input/output line to the first input/output line in response to a write enable signal enabled by a write command.
Public/Granted literature
- US20080101135A1 High-density semiconductor device Public/Granted day:2008-05-01
Information query
IPC分类: