A method of programming a carbon nanotube memory cell is provided, wherein the memory cell comprises a first conductor, a steering element, a carbon nanotube fabric, and a second conductor, wherein the steering element and the carbon nanotube fabric are arranged electrically in series between the first conductor and the second conductor, and wherein the entire carbon nanotube memory cell is formed above a substrate, the carbon nanotube fabric having a first resistivity, the method including applying a first electrical set pulse between the first conductor and the second conductor, wherein, after application of the first electrical set pulse, the carbon nanotube fabric has a second resistivity, the second resistivity less than the first resistivity. Other aspects are also provided.