Invention Grant
- Patent Title: Nonvolatile semiconductor memory device
- Patent Title (中): 非易失性半导体存储器件
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Application No.: US12714750Application Date: 2010-03-01
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Publication No.: US07924615B2Publication Date: 2011-04-12
- Inventor: Natsuo Ajika , Shoji Shukuri , Masaaki Mihara , Yoshiki Kawajiri
- Applicant: Natsuo Ajika , Shoji Shukuri , Masaaki Mihara , Yoshiki Kawajiri
- Applicant Address: JP Hyogo
- Assignee: Genusion, Inc.
- Current Assignee: Genusion, Inc.
- Current Assignee Address: JP Hyogo
- Agency: The Marbury Law Group PLLC
- Priority: JPP2006-066627 20060310
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
The present invention relates to a nonvolatile semiconductor memory, and more specifically relates to a nonvolatile semiconductor memory with increased program throughput. The present invention provides a nonvolatile semiconductor memory device with a plurality of block source lines corresponding to the memory blocks, arranged in parallel to the word lines, a plurality of global source lines arranged in perpendicular to the block source lines; and a plurality of switches for selectively connecting corresponding ones of the block source lines and the global source lines.
Public/Granted literature
- US20100149875A1 Nonvolatile Semiconductor Memory Device Public/Granted day:2010-06-17
Information query
