Invention Grant
US07924642B2 Sense amp circuit, and semiconductor memory device using the same
有权
检测放大器电路和使用其的半导体存储器件
- Patent Title: Sense amp circuit, and semiconductor memory device using the same
- Patent Title (中): 检测放大器电路和使用其的半导体存储器件
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Application No.: US12541529Application Date: 2009-08-14
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Publication No.: US07924642B2Publication Date: 2011-04-12
- Inventor: Toshimasa Namekawa
- Applicant: Toshimasa Namekawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-051203 20070301
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A differential input circuit receives differential input signals at a pair of differential input terminals and produces a pair of first differential output signals. A sensing circuit senses at least one of the pair of first differential output signals reaching a certain voltage and provides an activation signal. A latch-type amplifier provides a pair of second differential output signals when activated in accordance with the activation signal. A cutoff circuit establishes connection between the differential input circuit and the latch-type amplifier and breaks connection between the differential input circuit and the latch-type amplifier in accordance with the activation signal.
Public/Granted literature
- US20090303823A1 SENSE AMP CIRCUIT, AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME Public/Granted day:2009-12-10
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