Invention Grant
- Patent Title: Internal source voltage generation circuit and generation method thereof
- Patent Title (中): 内部源电压产生电路及其生成方法
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Application No.: US12492604Application Date: 2009-06-26
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Publication No.: US07924649B2Publication Date: 2011-04-12
- Inventor: Jae-Boum Park
- Applicant: Jae-Boum Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0038529 20090430
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
An internal source voltage generation circuit includes main source voltage driving means configured to drive an internal source voltage terminal to a predetermined voltage level; and additional source voltage driving means configured to additionally drive the internal source voltage terminal in response to a data strobe signal.
Public/Granted literature
- US20100277988A1 INTERNAL SOURCE VOLTAGE GENERATION CIRCUIT AND GENERATION METHOD THEREOF Public/Granted day:2010-11-04
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